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Freescale Semiconductor Technical Data
Document Number: MMG3001NT1 Rev. 7, 3/2008
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NOT RECOMMENDED FOR NEW DESIGN
The MMG3001NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 40 - 3600 MHz * P1dB: 18.5 dBm @ 900 MHz * Small - Signal Gain: 20 dB @ 900 MHz * Third Order Output Intercept Point: 32 dBm @ 900 MHz * Single Voltage Supply * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
40 - 3600 MHz, 20 dB 18.5 dBm InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 20 - 25 - 22 18.5 32 2140 MHz 18 - 25 - 18 18 31 3500 MHz 16 - 19 - 17 15.5 28.5 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature
(2)
Symbol VCC ICC Pin Tstg TJ
Value 7 300 10 - 65 to +150 150
Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5.6 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 92.0 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2004-2008. All rights reserved.
MMG3001NT1 1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Broadband High Linearity Amplifier
MMG3001NT1
Table 4. Electrical Characteristics (VCC= 5.6 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Symbol Gp IRL ORL P1dB IP3 NF
(1) (1)
Min 18 -- -- -- -- -- 40 --
Typ 20 - 25 - 22 18.5 32 4.1 58 5.6
Max -- -- -- -- -- -- 75 --
Unit dB dB dB dBm dBm dB mA V
NOT RECOMMENDED FOR NEW DESIGN
Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current Supply Voltage
ICC VCC
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3001NT1 2 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Table 5. Functional Pin Description
Pin Number 1 RFin RFout/DC Supply 2 3 Pin Function 2
NOT RECOMMENDED FOR NEW DESIGN
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 0 (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
MMG3001NT1 RF Device Data Freescale Semiconductor 3
NOT RECOMMENDED FOR NEW DESIGN
Ground
50 OHM TYPICAL CHARACTERISTICS
25 TC = 85C 20 - 40C 0
Gp, SMALL-SIGNAL GAIN (dB)
25C -10 S11, S22 (dB) S22 -20 S11 -30 VCC = 5.6 Vdc VCC = 5.6 Vdc ICC = 58 mA -40 4 0 1 2 f, FREQUENCY (GHz) 3 4
NOT RECOMMENDED FOR NEW DESIGN
15
10 0 1 2 f, FREQUENCY (GHz) 3
Figure 2. Small - Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
23 21 Gp, SMALL-SIGNAL GAIN (dB) 19 17 15 13 11 9 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) VCC = 5.6 Vdc ICC = 58 mA 900 MHz 1960 MHz 2140 MHz 2600 MHz P1dB, 1 dB COMPRESSION POINT (dBm)
21 20 19 18 17 16 15 14 0.5 1 1.5 2 2.5 f, FREQUENCY (GHz) VCC = 5.6 Vdc ICC = 58 mA 3 3.5
3500 MHz
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 100 ICC, COLLECTOR CURRENT (mA) 33
Figure 5. P1dB versus Frequency
80
30
60
27
40
24 VCC = 5.6 Vdc ICC = 58 mA 100 kHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
20
21
0 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 VCC, COLLECTOR VOLTAGE (V)
18
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3001NT1 4 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 36 36 35 34 33 32 31 30 -40 VCC = 5.6 Vdc f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 43 W Dropping Resistor
33
NOT RECOMMENDED FOR NEW DESIGN
30
27
24 f = 900 MHz 100 kHz Tone Spacing 21 5.5 5.55 5.6 5.65 5.7 VCC, COLLECTOR VOLTAGE (V)
-20
0
20
40
60
80
100
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -40 MTTF (YEARS)
105
-50
104
-60 VCC = 5.6 Vdc ICC = 58 mA f = 900 MHz 100 kHz Tone Spacing
-70
-80 0 3 6 9 12 15 18 Pout, OUTPUT POWER (dBm)
103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5.6 Vdc, ICC = 58 mA
Figure 10. Third Order Intermodulation versus Output Power
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
8
-20 VCC = 5.6 Vdc, ICC = 58 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
-30
NF, NOISE FIGURE (dB)
6
-40
4
-50
2 VCC = 5.6 Vdc ICC = 58 mA 0 0 0.5 1 1.5 2 2.5 3 3.5 4 f, FREQUENCY (GHz)
-60
-70 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3001NT1
RF Device Data Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
50 OHM APPLICATION CIRCUIT: 40- 800 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
C5
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 S21 20 R1 10 0 -10 S22 -20 -30 -40 0 200 S11 400 f, FREQUENCY (MHz) VCC = 5.6 Vdc ICC = 58 mA 600 800 C1 L1 C2 C5 C4 C3
MMG30XX Rev 2
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2, C3 C4 C5 L1 R1 Description 0.01 F Chip Capacitors 1000 pF Chip Capacitor 47 pF Chip Capacitor 470 nH Chip Inductor 8.2 W Chip Resistor Part Number C0603C103J5RAC C0603C102J5RAC C0805C470J5RAC BK2125HM471 - T RK73B2ATTE8R2J Manufacturer Kemet Kemet Kemet Taiyo Yuden KOA Speer
Table 9. Supply Voltage versus R1 Values
Supply Voltage R1 Value 6 6.9 7 24 8 41 9 59 10 76 11 93 12 110 V
Note: To provide VCC = 5.6 Vdc and ICC = 58 mA at the device.
MMG3001NT1 6 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 800- 3600 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
C5
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
20 S21 10 VCC = 5.6 Vdc ICC = 58 mA 0 L1 -10 -20 C1 C2 R1 C5 C4 C3
S22 S11 MMG30XX Rev 2 1800 2300 2800 3300 3800
-30 800
1300
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 C5 L1 R1 Description 39 pF Chip Capacitors 0.01 F Chip Capacitor 1000 pF Chip Capacitor 47 pF Chip Capacitor 56 nH Chip Inductor 8.2 W Chip Resistor Part Number C0805C390J5RAC C0603C103J5RAC C0603C102J5RAC C0805C470J5RAC HK160856NJ - T RK73B2ATTE8R2J Manufacturer Kemet Kemet Kemet Kemet Taiyo Yuden KOA Speer
MMG3001NT1 RF Device Data Freescale Semiconductor 7
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Emitter S - Parameters (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25C, 50 Ohm System)
f MHz 100 S11 |S11| 0.01837 0.00937 0.02263 0.02049 0.02015 0.01939 0.0212 0.02169 0.02447 0.02643 0.02857 0.03094 0.03356 0.03495 0.03599 0.03675 0.0378 0.04014 0.03975 0.04101 0.0413 0.04078 0.04045 0.04005 0.03952 0.03786 0.03796 0.03675 0.03229 0.03309 0.03475 0.0367 0.03803 0.03976 0.04035 0.04093 0.0409 0.04127 0.04055 0.04148 0.04198 0.04249 0.04309 0.04316 0.158 - 92.445 96.518 101.715 91.299 77.961 71.36 63.516 55.112 49.889 47.303 43.937 42.055 40.001 38.298 36.713 34.449 35.697 34.93 35.048 34.972 36.31 38.732 39.914 43.011 44.538 46.354 48.792 27.259 25.231 23.271 22.494 21.485 21.793 21.332 21.941 20.661 17.824 20.129 18.841 18.596 18.599 19.388 19.789 |S21| 10.80154 10.61985 11.06276 10.97614 10.93416 10.89886 10.85777 10.81348 10.76682 10.71841 10.67367 10.61782 10.56473 10.50489 10.44613 10.38955 10.32195 10.26867 10.19351 10.13374 10.05555 9.98381 9.90685 9.83535 9.76304 9.68157 9.60628 9.52474 9.45514 9.36984 9.29518 9.2159 9.15729 9.07502 9.00137 8.92666 8.84934 8.75854 8.69148 8.6161 8.5446 8.47505 8.39794 8.32788 S21 176.164 173.508 170.083 167.952 165.552 163.145 160.903 158.599 156.269 154.026 151.767 149.477 147.215 144.98 142.748 140.536 138.333 136.075 133.939 131.742 129.606 127.42 125.299 123.178 121.077 118.951 116.874 114.777 112.739 110.697 108.724 106.764 104.763 102.811 100.821 98.873 96.931 95.008 93.046 91.185 89.293 87.398 85.501 83.624 |S12| 0.06918 0.06785 0.07095 0.07046 0.07052 0.07044 0.07055 0.07053 0.07056 0.07058 0.07057 0.07066 0.07064 0.07073 0.07084 0.07089 0.07106 0.07101 0.07128 0.07142 0.07148 0.07156 0.07171 0.07179 0.07197 0.07208 0.07224 0.07243 0.07269 0.0728 0.07296 0.07327 0.07341 0.07361 0.07373 0.07383 0.07407 0.07433 0.07451 0.07482 0.07498 0.07512 0.07543 0.0756 S12 0.196 - 0.796 - 2.253 - 2.513 - 2.899 - 3.499 - 3.885 - 4.455 - 4.766 - 5.297 - 5.783 - 6.195 - 6.702 - 7.082 - 7.625 - 8.108 - 8.539 - 8.95 - 9.497 - 10.015 - 10.588 - 10.989 - 11.51 - 12.025 - 12.554 - 13.057 - 13.606 - 14.151 - 14.685 - 15.204 - 15.823 - 16.372 - 16.955 - 17.538 - 18.047 - 18.59 - 19.216 - 19.75 - 20.324 - 20.966 - 21.435 - 22.217 - 22.79 - 23.41 |S22| 0.04789 0.05071 0.07322 0.06689 0.07111 0.07696 0.08093 0.08609 0.09084 0.09479 0.09752 0.1016 0.10489 0.10746 0.11046 0.11345 0.11524 0.11712 0.11971 0.12057 0.12293 0.12475 0.12702 0.12882 0.13202 0.13502 0.13836 0.14227 0.13499 0.13808 0.14111 0.14376 0.14728 0.14882 0.15301 0.15553 0.1587 0.1617 0.1659 0.16929 0.17351 0.17715 0.18032 0.18422 S22 11.134 - 17.196 - 28.31 - 35.935 - 41.106 - 47.831 - 52.772 - 57.016 - 60.897 - 65.139 - 69.112 - 72.747 - 76.469 - 80.336 - 84.309 - 88.629 - 93.045 - 97.401 - 101.389 - 106.494 - 111.339 - 115.996 - 120.553 - 125.245 - 129.596 - 133.849 - 138.332 - 140.027 - 143.203 - 146.041 - 149.267 - 152.506 - 155.031 - 157.889 - 160.786 - 163.24 - 165.666 - 168.355 - 170.838 - 173.6 - 176.054 - 178.865 178.51 (continued)
NOT RECOMMENDED FOR NEW DESIGN
200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250
MMG3001NT1 8 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
150
- 49.334
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Emitter S - Parameters (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2300 S11 |S11| 0.04326 0.04285 0.0428 0.04222 0.04157 0.04062 0.04117 0.0407 0.04099 0.04248 0.04329 0.04466 0.04661 0.04876 0.04991 0.05208 0.05426 0.05536 0.05758 0.06021 0.06243 0.06498 0.06832 0.07049 0.07294 0.07565 0.07682 21.542 23.93 25.661 28.349 30.594 32.718 35.498 39.668 40.736 44.129 47.509 51.043 53.041 57.415 59.701 61.593 64.102 65.235 65.884 66.564 66.702 65.787 65.869 65.731 65.097 65.299 64.978 |S21| 8.24837 8.17883 8.10402 8.0349 7.96381 7.89112 7.83503 7.76263 7.68838 7.62088 7.55264 7.48275 7.41535 7.34593 7.28251 7.21536 7.1502 7.08162 7.01653 6.94732 6.88222 6.81808 6.75612 6.69433 6.63494 6.57111 6.51018 S21 81.777 79.926 78.094 76.296 74.438 72.648 70.815 69.011 67.13 65.378 63.561 61.767 60.019 58.235 56.493 54.703 52.913 51.15 49.405 47.655 45.916 44.235 42.521 40.809 39.085 37.382 35.707 |S12| 0.07591 0.0761 0.07638 0.07665 0.07693 0.07715 0.07744 0.07768 0.07806 0.07826 0.0785 0.07867 0.07893 0.07915 0.07945 0.07976 0.07989 0.08017 0.08027 0.08054 0.08071 0.08097 0.08112 0.08128 0.08144 0.08171 0.08186 S12 - 24.034 - 24.632 - 25.226 - 25.841 - 26.474 - 27.199 - 27.904 - 28.528 - 29.281 - 29.943 - 30.741 - 31.392 - 32.182 - 32.903 - 33.641 - 34.4 - 35.181 - 35.962 - 36.771 - 37.539 - 38.36 - 39.051 - 39.867 - 40.621 - 41.453 - 42.369 - 43.091 |S22| 0.1871 0.19081 0.19358 0.19769 0.20079 0.20422 0.20869 0.21293 0.21614 0.22114 0.226 0.23048 0.23581 0.24106 0.24698 0.25213 0.25854 0.26426 0.27078 0.27729 0.28468 0.29005 0.29718 0.3026 0.30819 0.31389 0.31878 S22 175.803 170.371 167.872 164.997 162.204 159.371 156.39 153.567 150.373 147.517 144.417 141.675 138.661 136.002 133.272 130.712 128.119 125.669 123.284 120.844 118.633 116.391 114.187 112.291 110.431 108.662
NOT RECOMMENDED FOR NEW DESIGN
2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600
MMG3001NT1 RF Device Data Freescale Semiconductor 9
NOT RECOMMENDED FOR NEW DESIGN
2350
173.166
1.7 7.62 0.305 diameter
NOT RECOMMENDED FOR NEW DESIGN
5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 20. Recommended Mounting Configuration
MMG3001NT1 10 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
3.48
2.49
PACKAGE DIMENSIONS
NOT RECOMMENDED FOR NEW DESIGN
MMG3001NT1 RF Device Data Freescale Semiconductor 11
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
12
MMG3001NT1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
RF Device Data Freescale Semiconductor
MMG3001NT1
13
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
NOT RECOMMENDED FOR NEW DESIGN
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 5 6 7 Date Mar. 2007 July 2007 Mar. 2008 * * Description Corrected and updated Part Numbers in Tables 8 and 10, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3.
* Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5
* Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 8, 9
MMG3001NT1 14 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
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MMG3001NT1
Document Number: RF Device Data MMG3001NT1 Rev. 7, 3/2008 Freescale Semiconductor
15
NOT RECOMMENDED FOR NEW DESIGN

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